MAX1385BUTM+【PDF 1/52 页】IC RF LDMOS BIAS CNTRLR 48-TQFN

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Sheet目录471

[1页]2页 3页 4页 5页

ATION

AILABL

19-4456; Rev 0; 2/09

KIT

EVALU E

Dual RF LDMOS Bias Controllers

with I 2 C/SPI Interface

General Description

The MAX1385/MAX1386 set and control bias conditions

for dual RF LDMOS power devices found in cellular

base stations. Each device includes a high-side cur-

rent-sense amplifier with programmable gains of 2, 10,

and 25 to monitor LDMOS drain current over the 20mA

to 5A range. Two external diode-connected transistors

monitor LDMOS temperatures while an internal temper-

ature sensor measures the local die temperature of the

MAX1385/MAX1386. A 12-bit ADC converts the pro-

grammable-gain amplifier (PGA) outputs, external/inter-

nal temperature readings, and two auxiliary inputs.

The two gate-drive channels, each consisting of 8-bit

coarse and 10-bit fine DACs and a gate-drive amplifier,

generate a positive gate voltage to bias the LDMOS

devices. The MAX1385 includes a gate-drive amplifier

with a gain of 2 and the MAX1386 gate-drive amplifier

provides a gain of 4. The 8-bit coarse and 10-bit fine

DACs allow up to 18 bits of resolution. The MAX1385/

MAX1386 include autocalibration features to minimize

error over time, temperature, and supply voltage.

The MAX1385/MAX1386 feature an I 2 C/SPI?-compatible

serial interface. Both devices operate from a 4.75V to

5.25V analog supply (3.2mA supply current), a 2.7V to

5.25V digital supply (3.1mA supply current), and a 4.75V

to 11.0V gate-drive supply (4.5mA supply current). The

MAX1385/MAX1386 are available in a 48-pin thin QFN

package.

Applications

RF LDMOS Bias Control in Cellular Base Stations

Industrial Process Control

Features

? Integrated High-Side Drain Current-Sense PGA

with Gain of 2, 10, or 25

? ±0.5% Accuracy for Sense Voltage Between 75mV

and 250mV

? Full-Scale Sense Voltage of 100mV with Gain of 25

? Full-Scale Sense Voltage of 250mV with Gain of 10

? Common-Mode Range of 5V to 30V Drain Voltage

for LDMOS

? Adjustable Low Noise 0 to 5V, 0 to 10V Output

Gate-Bias Voltage Ranges with ±10mA Gate Drive

? Fast Clamp to 0V for LDMOS Protection

? 8-Bit DAC Control of Gate-Bias Voltage

? 10-Bit DAC Control of Gate-Bias Offset with

Temperature

? Internal Die Temperature Measurement

? External Temperature Measurement by Diode-

Connected Transistor (2N3904)

? Internal 12-Bit ADC Measurement of Temperature,

Current, and Voltages

? Selectable I 2 C-/SPI-Compatible Serial Interface

400kHz/1.7MHz/3.4MHz I 2 C-Compatible Control

for Settings and Data Measurement

16MHz SPI-Compatible Control for Settings

and Data Measurement

? Internal 2.5V Reference

? Three Address Inputs to Control Eight Devices in

I 2 C Mode

Ordering Information/Selector Guide

PART

MAX1385 AETM+**

MAX1385BETM+

MAX1386 AETM+**

MAX1386BETM+**

TEMP RANGE

-40°C to +85°C

PIN-PACKAGE

48 Thin QFN-EP*

TEMP ERROR (°C)

±1

±2

±1

±2

V GATE (V)

*EP = Exposed pad.

**Future product—contact factory for availability.

+Denotes a lead(Pb)-free/RoHS-compliant package.

Pin Configuration and Typical Operating Circuit (I 2 C Mode)

appear at end of data sheet.

SPI is a trademark of Motorola, Inc.

________________________________________________________________ Maxim Integrated Products

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

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